IGBT（Insulated Gate Bipolar Transistor），絕緣柵雙極型晶體管，是由BJT（雙極型三極管）和MOS（絕緣柵型場效應管）組成的復合全控型電壓驅動式功率半導體器件, 兼有MOSFET的高輸入阻抗和GTR的低導通壓降兩方面的優點。GTR飽和壓降低，載流密度大，但驅動電流較大;MOSFET驅動功率很小，開關速度快，但導通壓降大，載流密度小

北京京誠宏泰科技原裝正品現貨銷售4500V三菱IGBT模塊CM900HG-90H

IC..................................................................900 A
● VCES ...................................................... 4500 V
● High Insulated Type
● 1-element in a Pack
● AISiC Baseplate

CM600HG-90H

CM400HA-28H 400A/1400V/1U 
CM800HA-50H 800A/2500V/1U
CM600HA-28H 600A/1400V/1U 
CM1200HA-50H 1200A/2500V/1U
CM1000HA-28H 1000A/1400V/1U 
CM800HA-66H 800A/3300V/1U
CM400HA-34H 400A/1700V/1U 
CM1200HA-66H 1200A/3300V/1U
CM800HD-66H 800A/3300V/1U 
CM800HD-50H 800A/2500V/1U
CM1200HD-66H 1200A/3300V/1U 
CM1200HD-50H 1200A/2500V/1U